Gallium antimonide
Gallium antimonide
CAS: 12064-03-8
Molecular Formula: GaS
Gallium antimonide - Names and Identifiers
| Name | Gallium antimonide |
| Synonyms | Gallium antimonide gallanylidynestibane Gallium antimonide, single crystal substrate (100) |
| CAS | 12064-03-8 |
| EINECS | 235-058-8 |
Gallium antimonide - Physico-chemical Properties
| Molecular Formula | GaS |
| Molar Mass | 191.47 |
| Density | 5.619 g/mL at 25 °C 5.62 g/mL at 25 °C (lit.) |
| Melting Point | 710 °C 980 °C (lit.) |
| Water Solubility | Insoluble in water. |
| Appearance | pieces |
| Exposure Limit | ACGIH: TWA 0.5 mg/m3;NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3 |
| Storage Condition | Room Temprature |
| MDL | MFCD00016101 |
Gallium antimonide - Risk and Safety
| Risk Codes | R20/22 - Harmful by inhalation and if swallowed. R51/53 - Toxic to aquatic organisms, may cause long-term adverse effects in the aquatic environment. |
| Safety Description | 61 - Avoid release to the environment. Refer to special instructions / safety data sheets. |
| UN IDs | UN 1549 6.1/PG 3 |
| WGK Germany | 2 |
| TSCA | Yes |
| Hazard Class | 6.1 |
| Packing Group | III |
Gallium antimonide - Uses and synthesis methods
application
gallium antimonide (GalliumAntimonite,GaSb) is a III-V group compound semiconductor, belonging to sphalerite and direct band gap material, with a forbidden band width of 0.725eV(300K) and a lattice constant of 0.60959nm. GaSb has excellent physical and chemical properties and is often used as a substrate material for infrared detectors and lasers of 8 ~ 14mm and more than 14mm. In addition, Te-doped GaSb can be used to prepare thermal photovoltaic devices, laminated solar cells and microwave devices with high photoelectric conversion efficiency.
crystal growth
The most common method for growing single crystals from melts is the Czochralski method (CZ). However, for GaSb materials, Sb elements are more easily dissociated and volatilized during single crystal growth, which will lead to imbalance of Ga:Sb stoichiometric ratio in the melt, resulting in dislocation defects and even distortion to polycrystalline. Therefore, in the process of GaSb single crystal growth, the method of covering the surface of the melt in the ordinary Czochralski crucible with a layer of liquid covering agent is often used to seal the GaSb melt and control the dissociation and volatilization of Sb elements in the melt, so as to realize the stable growth of GaSb crystals, which is the liquid sealed Czochralski (LEC). At the same time, according to the dissociation pressure of GaSb near the melting point, inert gas at a certain pressure is filled in the growth chamber to strengthen the inhibition of the dissociation and volatilization of Sb elements. The advantage of using LEC method to prepare GaSb single crystal is that the equipment structure is relatively simple and the reliability is higher; the single crystal furnace is equipped with an observation window, the crystal growth process can be observed in real time, and the crystal growth parameters can be adjusted in time according to its growth state. However, there are many problems in the process of preparing GaSb single crystal by LEC method, such as the space in the single crystal furnace is relatively open, the heat convection in the furnace is relatively complex, the crystal growth defects are greatly affected by the drawing process, and the Sb element in the polycrystalline material is more volatile.
Production method
put 20g gallium and 34.94g antimony into a graphite plate, put them into a quartz tube, and fully replace the air with a hydrogen stream, then heat the quartz tube in the hydrogen stream to 720~730 ℃ to combine it.
In order to obtain a GaSb single crystal, the GaSb in the molten state can be slowly taken out of the quartz tube to solidify from one end of the disk to form crystals. If you want to make GaSb for semiconductors, the raw material plate and quartz tube used should be high-purity products, and if necessary, regional melting and purification can be carried out.
Last Update：2024-04-10 22:29:15
Gallium antimonide - Nature
| resistivity (resistivity) | ~0.1 Ω-cm |
| crystal structure | Cubic, Sphalerite Structure - Space Group F(-4)3m |
| EPA chemical information | Antimony, compd. with gallium (1:1) (12064-03-8) |
Last Update：2024-04-10 22:29:15
Supplier List
Product Name: Gallium antimonide Visit Supplier Webpage Request for quotation
CAS: 12064-03-8
Tel: 18301782025
Email: 3008007409@qq.com
Mobile: 18021002903
QQ: 3008007409
Wechat: 18301782025
CAS: 12064-03-8
Tel: 18301782025
Email: 3008007409@qq.com
Mobile: 18021002903
QQ: 3008007409
Wechat: 18301782025
Product Name: Gallium antimonide Visit Supplier Webpage Request for quotation
CAS: 12064-03-8
Tel: 18301782025
Email: 3008007409@qq.com
Mobile: 18021002903
QQ: 3008007409
Wechat: 18301782025
CAS: 12064-03-8
Tel: 18301782025
Email: 3008007409@qq.com
Mobile: 18021002903
QQ: 3008007409
Wechat: 18301782025
View History